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1. product pro?le 1.1 general description the BGU7003 mmic is a wideband ampli?er in sige:c technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline sot891 package. 1.2 features n low noise high gain microwave mmic n applicable between 40 mhz and 6 ghz n integrated temperature stabilized bias for easy design n bias current con?gurable with external resistor n noise ?gure nf = 0.80 db at 1.575 ghz n insertion power gain = 18.3 db at 1.575 ghz n 110 ghz transit frequency - sige:c technology n power-down mode current consumption < 1 m a n optimized performance at low 5 ma supply current n esd protection > 1 kv human body model (hbm) on all pins 1.3 applications n gps n satellite radio n low-noise ampli?ers for microwave communications systems n wlan and cdma applications n analog / digital cordless applications BGU7003 wideband silicon germanium low-noise ampli?er mmic rev. 01 2 march 2009 product data sheet caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 2 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic 1.4 quick reference data [1] i cc(tot) = i cc + i rf_out + i r_bias . [2] t sp is the temperature at the solder point of the ground lead. 2. pinning information 3. ordering information 4. marking table 1. quick reference data t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; v enable 3 0.7 v; f = 1575 mhz; z s = z l = 50 w (input and output matched to 50 w ) unless otherwise speci?ed. symbol parameter conditions min typ max unit v cc supply voltage rf input ac coupled 2.2 - 2.85 v i cc(tot) total supply current con?gurable with external resistor [1] 3 - 15 ma t amb ambient temperature - 40 +25 +85 c p tot total power dissipation t sp 103 c [2] - - 70 mw | s 21 | 2 insertion power gain - 18.3 - db nf noise ?gure - 0.80 - db p i(1db) input power at 1 db gain compression - - 20.1 - dbm ip3 i input third-order intercept point jammers at f 1 = f + 138 mhz and f 2 = f + 276 mhz - - 0.2 - dbm table 2. pinning pin description simpli?ed outline graphic symbol 1 r_bias 2 rf_in 3 gnd 4 rf_out 5 enable 6v cc bottom view 3 2 1 4 5 6 sym128 5 6 13 4 2 table 3. ordering information type number package name description version BGU7003 xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 1 0.5 mm sot891 table 4. marking codes type number marking code BGU7003 b3
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 3 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic 5. limiting values [1] t sp is the temperature at the solder point of the ground lead. 6. thermal characteristics 7. characteristics [1] i cc(tot) = i cc + i rf_out + i r_bias . [2] guaranteed by design and characterization. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage rf input ac coupled - 3.0 v i cc(tot) total supply current con?gurable with external resistor - 25 ma p tot total power dissipation t sp 103 c [1] -70mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 235 k/w table 7. characteristics t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; v enable 3 0.7 v unless otherwise speci?ed. all measurements done on characterization board without matching, de-embedded up to the pins. symbol parameter conditions min typ max unit v cc supply voltage rf input ac coupled 2.2 - 2.85 v i cc(tot) total supply current con?gurable with external resistor [1] 3 - 15 ma v enable 0.4 v [1] - - 0.001 ma t amb ambient temperature - 40 +25 +85 c | s 21 | 2 insertion power gain t amb = 25 c f = 1.575 ghz 16.0 17.5 - db f = 2.4 ghz [2] 14.0 15.2 - db f = 5.8 ghz [2] 10.0 11.4 - db - 40 c t amb 85 c f = 1.575 ghz [2] 15.0 17.5 - db f = 2.4 ghz [2] 13.0 15.2 - db f = 5.8 ghz [2] 9.0 11.4 - db msg maximum stable gain f = 1.575 ghz - 20.5 - db f = 2.4 ghz - 17.8 - db f = 5.8 ghz - 15.4 - db nf min minimum noise ?gure f = 1.575 ghz - 0.70 - db f = 2.4 ghz - 0.80 - db f = 5.8 ghz - 1.5 - db
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 4 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic table 8. enable (pin 5) - 40 c t amb +85 c v enable (v) state 0.4 off 3 0.7 on t amb = 25 c. (1) v cc = 2.2 v (2) v cc = 2.5 v (3) v cc = 2.85 v fig 1. total supply current as a function of bias resistor; typical values r bias ( w ) 0 7000 2000 4000 6000 5000 1000 3000 001aaj652 10 20 30 i cc(tot) (ma) 0 (1) (2) (3)
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 5 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic t amb = 25 c; i cc(tot) = 5.0 ma; v cc = 2.5 v; p drive = - 30 dbm; z 0 = 50 w . fig 2. input re?ection coef?cient (s 11 ); typical values t amb = 25 c; i cc(tot) = 5.0 ma; v cc = 2.5 v; p drive = - 30 dbm; z 0 = 50 w . fig 3. output re?ection coef?cient (s 22 ); typical values 001aaj653 90 - 90 5 0.5 6 ghz 100 mhz 0.2 + 0.2 0 + 2 + 5 - 5 - 2 - 0.2 + 0.5 - 0.5 + 1 - 1 2 1 10 0 0.2 0.6 0.4 0.8 1.0 1.0 - 45 - 135 45 135 180 0 001aaj654 90 - 90 5 0.5 6 ghz 100 mhz 0.2 + 0.2 0 + 2 + 5 - 5 - 2 - 0.2 + 0.5 - 0.5 + 1 - 1 2 1 10 0 0.2 0.6 0.4 0.8 1.0 1.0 - 45 - 135 45 135 180 0
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 6 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic t amb = 25 c; i cc(tot) = 5.0 ma; v cc = 2.5 v; p drive = - 30 dbm; z 0 = 50 w . t amb = 25 c; i cc(tot) = 5.0 ma; v cc = 2.5 v; p drive = - 30 dbm; z 0 = 50 w . fig 4. insertion power gain ( | s 21 | 2 ) as a function of frequency; typical values fig 5. isolation ( | s 12 | 2 ) as a function of frequency; typical values f (mhz) 0 6000 4000 2000 001aaj655 10 20 30 |s 21 | 2 (db) 0 f (mhz) 0 6000 4000 2000 001aaj657 - 40 - 20 0 |s 12 | 2 (db) - 60 t amb = 25 c; i cc(tot) = 5.0 ma; v cc = 2.5 v; p drive = - 30 dbm; z 0 = 50 w . t amb = 25 c; i cc(tot) = 5.0 ma; v cc = 2.5 v; p drive = - 30 dbm; z 0 = 50 w . fig 6. rollets stability factor as a function of frequency; typical values fig 7. minimum noise ?gure as a function of frequency; typical values 001aaj659 1 k 10 - 1 f (mhz) 0 6000 4000 2000 001aaj660 f (mhz) 0 6000 4000 2000 1.0 0.5 1.5 2.0 nf min (db) 0
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 7 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic 8. application information gps lna other applications available. please contact your local sales representative for more information. application note(s) available on the nxp website. t amb = 25 c; i cc(tot) = 5.0 ma; v cc = 2.5 v. fig 8. optimum source re?ection coef?cient for minimum noise ?gure; typical values t amb = 25 c; i cc(tot) = 5.0 ma; v cc = 2.5 v. normalized to 50 w . fig 9. equivalent noise resistance as a function of frequency; typical values 001aaj661 90 - 90 5 0.5 6 ghz 100 mhz 0.2 + 0.2 0 + 2 + 5 - 5 - 2 - 0.2 + 0.5 - 0.5 + 1 - 1 2 1 10 0 0.2 0.6 0.4 0.8 1.0 1.0 - 45 - 135 45 135 180 0 f (mhz) 0 6000 4000 2000 001aaj662 0.1 0.2 0.3 r n(eq) 0
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 8 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic 8.1 application circuit in figure 10 the application diagram as supplied on the evaluation board is given. [1] all capacitors, inductors and resistors have 0402 footprint. fig 10. circuit diagram of the evaluation board table 9. list of components for circuit, see figure 10 . component description value supplier name/type remarks c1, c2 capacitor 100 pf [1] muratagrm1555 dc blocking c3 capacitor 180 pf [1] muratagrm1555 decoupling l1 inductor 2.7 nh [1] murata/lqw15a high quality factor, low series resistance input matching l2 inductor 33 nh [1] murata/lqw15a high quality factor, low series resistance input matching l3 inductor 3.9 nh [1] murata/lqg15hs output matching / dc shunt l4 inductor 4.7 nh [1] murata/lqg15hs output matching r1 resistor 180 w [1] r2 resistor 0 w [1] bridge r3 resistor 3300 w [1] bias setting x1, x2 sma rf connector - johnson, end launch sma 142-0701-841 rf input / rf output x3 dc header - molex, pcb header, right angle, 1 row, 4 way 90121-0764 bias connector 001aaj663 rf in rf out x1 x2 l1 c1 l2 r3 r1 l3 c3 x3 l4 c2 2 1 r b v cc v en gnd 6 4 5 3 BGU7003
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 9 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic 8.2 application board layout figure 11 shows the board layout with component identi?cations. 8.3 printed-circuit board the material that has been used for the evaluation board is fr4 using the stack shown in figure 12 . fig 11. printed-circuit board (pcb) of the BGU7003 evaluation board 001aaj664 BGU7003 x2 x1 x3 semiconductors BGU7003_v2.0 application board gnd jj 02/2008 fr4 h = 0.2 er = 4.6 rf in rf out rb vcc ven gnd l1 l2 c1 r3 r2 c3 r1 l4 c2 l3 material supplier is isola duraver; e r = 4.6 to 4.9; tan d = 0.02. fig 12. stack of the pcb material 001aaj688 35 m m cu 0.2 mm fr4 critical 0.8 mm fr4 only for mechanical rigidity of pcb 35 m m cu 35 m m cu
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 10 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic 8.4 gps evaluation board table 10. gps application characteristics t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; f = 1.575 ghz; v enable 3 0.7 v; z s = z l = 50 w (input and output matched to 50 w ) unless otherwise speci?ed. symbol parameter conditions min typ max unit | s 21 | 2 insertion power gain - 18.3 - db | s 11 | 2 input return loss - - 5.4 - db | s 22 | 2 output return loss - - 19.5 - db | s 12 | 2 isolation - - 24.6 - db nf noise ?gure - 0.80 - db p i(1db) input power at 1 db gain compression - - 20.1 - dbm p l(1db) output power at 1 db gain compression - - 2.8 - dbm ip3 i input third-order intercept point jammers at f 1 = f + 138 mhz and f 2 = f + 276 mhz - - 0.2 - dbm f 1 = f + 5 mhz; f 2 = f + 10 mhz - - 5.2 - dbm t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; v enable 3 0.7 v; z s =z l =50 w (input and output matched to 50 w ). fig 13. input re?ection coef?cient (s 11 ); typical values 001aaj665 90 - 90 5 0.5 3 ghz 500 mhz 0.2 + 0.2 0 + 2 + 5 - 5 - 2 - 0.2 + 0.5 - 0.5 + 1 - 1 2 1 10 0 0.2 0.6 0.4 0.8 1.0 1.0 - 45 - 135 45 135 180 0
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 11 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; v enable 3 0.7 v; z s =z l =50 w (input and output matched to 50 w ). fig 14. output re?ection coef?cient (s 22 ); typical values 001aaj666 90 - 90 5 0.5 3 ghz 500 mhz 0.2 + 0.2 0 + 2 + 5 - 5 - 2 - 0.2 + 0.5 - 0.5 + 1 - 1 2 1 10 0 0.2 0.6 0.4 0.8 1.0 1.0 - 45 - 135 45 135 180 0 t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; v enable 3 0.7 v; z s =z l =50 w (input and output matched to 50 w ). t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; v enable 3 0.7 v; z s =z l =50 w (input and output matched to 50 w ). fig 15. input return loss ( | s 11 | 2 ) as a function of frequency; typical values fig 16. output return loss ( | s 22 | 2 ) as a function of frequency; typical values 001aaj667 f (mhz) 0 3500 2500 1500 3000 2000 1000 500 - 6 - 4 - 8 - 2 0 |s 11 | 2 (db) - 10 f (mhz) 0 3500 2500 1500 3000 2000 1000 500 001aaj668 - 20 - 10 0 |s 22 | 2 (db) - 30
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 12 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; v enable 3 0.7 v; z s =z l =50 w (input and output matched to 50 w ). t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; v enable 3 0.7 v; z s =z l =50 w (input and output matched to 50 w ). fig 17. insertion power gain ( | s 21 | 2 ) as a function of frequency; typical values fig 18. reverse isolation ( | s 12 | 2 ) as a function of frequency; typical values f (mhz) 0 1000 2000 3000 3500 2500 1500 500 001aaj669 10 20 30 |s 21 | 2 (db) 0 f (mhz) 0 1000 2000 3000 3500 2500 1500 500 001aaj702 - 40 - 20 0 |s 12 | 2 (db) - 60 t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; f = 1.575 ghz; f 1 = f + 138 mhz; f 2 = f + 276 mhz; v enable 3 0.7 v; z s =z l =50 w (input and output matched to 50 w ) t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; f = 1.575 ghz; f 1 = f + 5 mhz; f 2 = f + 10 mhz; v enable 3 0.7 v; z s =z l =50 w (input and output matched to 50 w ) fig 19. load power and third order intermodulation distortion as function of drive power; typical values fig 20. load power and third order intermodulation distortion as function of drive power; typical values p drive (dbm) - 40 10 0 - 20 - 10 - 30 001aaj671 - 40 - 80 0 40 p (db) - 120 ip3 i = - 0.2 dbm p l imd3 p drive (dbm) - 40 0 - 10 - 30 - 20 001aaj672 - 40 - 80 0 40 p (db) - 120 ip3 i = - 5.2 dbm p l imd3
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 13 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; f = 1.575 ghz; v enable 3 0.7 v; z s =z l =50 w (input and output matched to 50 w ). t amb =25 c; v cc = 2.5 v; i cc(tot) = 5.0 ma; v enable 3 0.7 v; z s =z l =50 w (input and output matched to 50 w ). fig 21. power gain as a function of drive power; typical values fig 22. power gain and noise ?gure as function of frequency; typical values p drive (dbm) - 35 - 15 - 19 - 27 - 23 - 31 001aaj673 14 18 22 g p (db) 10 f (mhz) 1475 1675 1625 1525 1575 001aaj674 15 10 20 25 g p (db) 5 1 0.5 1.5 2 nf (db) 0 nf g p
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 14 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic 9. package outline fig 23. package outline sot891 (xson6) terminal 1 index area references outline version european projection issue date iec jedec jeita sot891 sot891 05-04-06 07-05-15 xson6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm d e e 1 e a 1 b l l 1 e 1 0 1 2 mm scale dimensions (mm are the original dimensions) unit mm 0.20 0.12 1.05 0.95 0.35 0.27 a 1 max b e 1.05 0.95 d ee 1 l 0.40 0.32 l 1 0.35 0.55 a max 0.5 0.04 1 6 2 5 3 4 a 6 (1) 4 (1) note 1. can be visible in some manufacturing processes.
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 15 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic 10. soldering 11. abbreviations 12. revision history re?ow soldering is the only recommended soldering method. fig 24. re?ow soldering footprint sot891_fr solder resist occupied area solder land plus solder paste dimensions in mm 0.25 (6 ) 0.15 (6 ) 0.5 (6 ) 0.6 (6 ) 0.7 0.35 1.4 1.05 table 11. abbreviations acronym description ac alternating current cdma code division multiple access dc direct current fr4 flame retardant 4 gps global positioning system lna low-noise ampli?er mmic monolithic microwave integrated circuit rf radio frequency sige:c silicon germanium carbon sma subminiature version a wlan wireless local area network table 12. revision history document id release date data sheet status change notice supersedes BGU7003_1 20090302 product data sheet - -
BGU7003_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 2 march 2009 16 of 17 nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors BGU7003 wideband silicon germanium low-noise ampli?er mmic ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 2 march 2009 document identifier: BGU7003_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 application information gps lna . . . . . . . . . . 7 8.1 application circuit . . . . . . . . . . . . . . . . . . . . . . . 8 8.2 application board layout . . . . . . . . . . . . . . . . . . 9 8.3 printed-circuit board . . . . . . . . . . . . . . . . . . . . 9 8.4 gps evaluation board. . . . . . . . . . . . . . . . . . . 10 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 16 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 14 contact information. . . . . . . . . . . . . . . . . . . . . 16 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

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